CQY37N vishay semiconductors 1 (5) rev. 2, 20-may-99 www.vishay.com document number 81002 gaas infrared emitting diode in miniature (t ) package description CQY37N is a standard gaas infrared emitting diode in a miniature top view plastic package. its clear lens provides a high radiant intensity without external optics. the diode is case compatible to the bpw17n photo- transistor, allowing the user to assemble his own optical interrupters. features suitable for pulse operation standard t lensed miniature package angle of half intensity j = 12 peak wavelength p = 950 nm good spectral matching to si photodetectors 94 8639 applications radiation source in near infrared range absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit reverse voltage v r 5 v forward current i f 100 ma surge forward current t p 100 s i fsm 2 a power dissipation p v 170 mw junction temperature t j 100 c storage temperature range t stg 25...+100 c soldering temperature t 3 s t sd 245 c thermal resistance junction/ambient r thja 450 k/w
CQY37N vishay semiconductors 2 (5) rev. 2, 20-may-99 www.vishay.com document number 81002 basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit forward voltage i f = 50 ma, t p 20 ms v f 1.3 1.6 v breakdown voltage i r = 100 a v (br) 5 v junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 50 pf radiant intensity i f = 50 ma, t p 20 ms i e 2.2 5 mw/sr radiant power i f = 50 ma, t p 20 ms e 10 mw temp. coefficient of e i f = 50 ma tk e 0.8 %/k angle of half intensity j + 12 deg peak wavelength i f = 50 ma p 950 nm spectral bandwidth i f = 50 ma 50 nm rise time i f = 1.5 a, t p /t = 0.01, t p 10 s t r 400 ns fall time i f = 1.5 a, t p /t = 0.01, t p 10 s t f 450 ns typical characteristics (t amb = 25 c unless otherwise specified) 020406080 0 50 100 150 200 250 p power dissipation ( mw ) v t amb ambient temperature ( 5 c ) 100 94 8029 e r thja figure 1. power dissipation vs. ambient temperature 020406080 0 25 50 75 100 125 i forward current ( ma ) f t amb ambient temperature ( 5 c ) 100 94 7916 e r thja figure 2. forward current vs. ambient temperature
CQY37N vishay semiconductors 3 (5) rev. 2, 20-may-99 www.vishay.com document number 81002 012 3 v f forward voltage ( v ) 4 94 7996 e 10 1 10 0 10 2 10 3 10 4 10 1 i forward current ( ma ) f figure 3. forward current vs. forward voltage 020406080 0.7 0.8 0.9 1.0 1.1 1.2 v relative forward voltage frel t amb ambient temperature ( 5 c ) 100 94 7990 e i f = 10 ma figure 4. relative forward voltage vs. ambient temperature i f forward current ( ma ) 94 7920 e 10 3 10 1 10 2 10 4 10 0 i radiant intensity ( mw/sr ) e 0.1 1 10 100 figure 5. radiant intensity vs. forward current 0.1 1.0 10.0 100.0 1 10 100 1000 13718 i f forward current ( ma ) radiant power ( mw ) e figure 6. radiant power vs. forward current 10 10 50 0 100 0 0.4 0.8 1.2 1.6 i ; e rel e rel t amb ambient temperature ( 5 c ) 140 94 7993 e i f = 20 ma figure 7. rel. radiant intensity\power vs. ambient temperature 900 950 0 0.25 0.5 0.75 1.0 1.25 wavelength ( nm ) 1000 94 7994 e relative radiant power e rel i f = 100 ma figure 8. relative radiant power vs. wavelength
CQY37N vishay semiconductors 4 (5) rev. 2, 20-may-99 www.vishay.com document number 81002 0.4 0.2 0 0.2 0.4 i relative radiant intensity e rel 0.6 94 7922 e 0.6 0.9 0.8 0 5 30 5 10 5 20 5 40 5 50 5 60 5 70 5 80 5 0.7 1.0 figure 9. relative radiant intensity vs. angular displacement dimensions in mm 95 11262
CQY37N vishay semiconductors 5 (5) rev. 2, 20-may-99 www.vishay.com document number 81002 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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